Investigation of the radiation hardness of GaAs:Cr semiconductor detectors irradiated with fast neutrons at the reactor IBR-2

Autor:	Alexey Zhemchugov, A. Guskov, G. A. Chelkov, M Bulavin, Uladzimir Kruchonak, S. Abou El-Azm, N Zamiatin, A. Sheremetyeva, M. I. Gostkin
Rok vydání:	2020
Předmět:	History Materials science Silicon business.industry chemistry.chemical_element Neutron temperature Computer Science Applications Education Gallium arsenide Semiconductor detector chemistry.chemical_compound chemistry Neutron flux Optoelectronics Neutron Irradiation business Radiation hardening
Zdroj:	Journal of Physics: Conference Series. 1690:012042
ISSN:	1742-6596 1742-6588
Popis:	Investigation of the semiconductor detectors properties under neutron irradiation is very important for their practical application. High-resistivity gallium arsenide detectors (GaAs:Cr) were irradiated with various fast neutron fluences in range from 3.9×10n cm−2 to 3.7×1016 cm−2 at the IBR-2 reactor, FLNP, JINR. The neutron fluence was measured by placing silicon planar detectors at the measured points and measuring the 1 MeV (Si) equivalent fast neutron fluence. The charge collection efficiency and the current-voltage characteristics of irradiated detectors were measured, and their degradation after neutron irradiation was compared with the results obtained by irradiation with 21 MeV electrons.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::44363f7df21973850bdda9600aab3db6 https://doi.org/10.1088/1742-6596/1690/1/012042 Zobrazit plný text záznamu