Autor: |
J. Cazaux, G. Laurencin, J. Olivier |
Rok vydání: |
1984 |
Předmět: |
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Zdroj: |
Journal de Physique Lettres. 45:999-1005 |
ISSN: |
0302-072X |
DOI: |
10.1051/jphyslet:019840045020099900 |
Popis: |
Experimental results of Auger profiles obtained on chemical bevels of hetero-epitaxial structures (InP/Ga x In 1−x As/InP) are reported. The theoretical analysis of these results shows that the positions of the interfaces and widths of the quantum wells can be determined with an accuracy of ± one lattice spacing (ultimate limit). The evolution of the concentration gradient is also suggested. Quantum wells of ∼3.5 nm thick (6 lattice spacings) are well resolved Presentation des profils Auger obtenus sur des biseaux chimiques d'heterostructures epitaxiees InP/Ga x In 1−x As/InP. L'analyse theorique des resultats montre que la position des interfaces et la largeur des puits quantiques peut etre determinee avec une precision de ± une maille cristalline. Evolution du gradient de concentration |
Databáze: |
OpenAIRE |
Externí odkaz: |
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