| Autor: |
Hat Nguyen, Y. Chetrit, Ling Liao, Ansheng Liu, Mario J. Paniccia, Juthika Basak, D. Rubin |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
2008 IEEE International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2008.4796726 |
| Popis: |
We present recent results of a silicon photonic integrated chip that is capable of transmitting data at an aggregate rate of 200 Gb/s. It is based on wavelength division multiplexing where an array of eight high speed silicon optical modulators are monolithically integrated with a demultiplexer and a multiplexer. The modulators, each capable of 25 Gb/s data transmission, are based on the carrier depletion effect of pn diodes, and the demultiplexer/multiplexer is based on a cascaded asymmetric Mach Zehnder interferometer design. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
