2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure

Autor:	Fengbo Liao, Keming Zhang, Ni Zeng, Mengxiao Lian, Jialin Li, Xichen Zhang, Ziwei Tian, Yi-An Yin
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Electronic Materials. 51:3613-3623
ISSN:	1543-186X 0361-5235
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::441994951b3aa984cf25bd01a3ce704d https://doi.org/10.1007/s11664-022-09605-8 Zobrazit plný text záznamu Full text from SpringerLink