Laser-induced bond breaking of the adatoms of the Si(111)-7 × 7 surface
| Autor: | Jun'ichi Kanasaki, Noriaki Itoh, Ken'ichi Ishikawa, Yasuo Nakai |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Surface (mathematics)
Silicon business.industry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Laser Fluence Surfaces Coatings and Films law.invention Semiconductor chemistry law Materials Chemistry Irradiation Atomic physics Scanning tunneling microscope business Quantum tunnelling |
| Zdroj: | Surface Science. 349:L153-L158 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(95)01346-6 |
| Popis: | Tunneling images of the Si(111)-7 × 7 surface before and after laser irradiation have been compared. Examination of more than 300 unit cells shows that the number of unit cells with missing center adatoms increases by 2.48 eV laser pulse irradiation at fluences slightly above the threshold laser fluence above which the emissions can be detected. No indication of melting is observed in the unit cells with missing adatoms. The results give clear evidence that laser-induced atomic emissions from semiconductor surfaces are electronic and site selective. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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