Effect of rapid thermal annealing on the optical and structural properties of highly strained quantum well structures

Autor:	G Ahmad, X.M Luo, Q. J. Xing, J. L. Brebner, C.W Chen, M Beaudoin, A. Chennouf
Rok vydání:	1996
Předmět:	Diffraction Photoluminescence Materials science business.industry Annealing (metallurgy) General Chemistry Chemical vapor deposition Condensed Matter Physics Crystallography Materials Chemistry Radiative transfer Optoelectronics Rapid thermal annealing Luminescence business Quantum well
Zdroj:	Solid State Communications. 98:1009-1013
ISSN:	0038-1098
DOI:	10.1016/0038-1098(96)00163-9
Popis:	The effect of rapid thermal annealing on the photoluminescence and x-ray diffraction characteristics of a highly strained InAs InP single quantum well structure grown by low-pressure metalorganic chemical vapor deposition has been investigated. Rapid thermal annealing has been found to significantly improve the crystalline quality of the strained InAs InP single quantum well structure. The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 after annealing at 700 °C for 5 s. The results obtained by high-resolution x-ray diffractometry have demonstrated no noticeable change of the structure in samples annealed at lower temperatures (below 750 °C). At higher temperatures, rapid thermal annealing deteriorated the x-ray diffraction characteristics, and also reduced the quantum well luminescence efficiency. Furthermore, we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::44128e6e31d36ceba73658902684ec59 https://doi.org/10.1016/0038-1098(96)00163-9 Zobrazit plný text záznamu Full Text from ScienceDirect