Graded Band Diode for Noise Generation in Terahertz Range
| Autor: | O. V. Botsula, K. H. Prykhodko |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Terahertz radiation Monte Carlo method Physics::Optics 020206 networking & telecommunications 02 engineering and technology Gallium arsenide Impact ionization chemistry.chemical_compound chemistry Electric field 0202 electrical engineering electronic engineering information engineering Optoelectronics business Spectroscopy Order of magnitude Diode |
| Zdroj: | 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS). |
| DOI: | 10.1109/uwbusis.2018.8520183 |
| Popis: | The noise signal sources at subterahertz(sub-THz) and terahertz(THz) region are useful in many applications such as tomographic imaging, spectroscopy, radars and other. The GaInAs-based diodes for noise generation in the sub-THz and THz region are proposed. The diodes based on the mechanism of impact ionization in graded-gap region and static high field domain formation near cathode. Ensemble Monte Carlo technique was used for diodes analyze. The spectral noise density power is calculated for difference profiles of spatial Ga distribution in GaInAs. It is found that the spectral noise density power of the proposed diodes exceeds the one of GaAs-based diodes by at least an order of magnitude. |
| Databáze: | OpenAIRE |
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