| Autor: | C. Andre T. Salama, Mehrdad Ramezani |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Gate turn-off thyristor
Materials science business.industry Electrical engineering NAND gate Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor BiCMOS Surfaces Coatings and Films Current injection technique Hardware and Architecture Signal Processing Hardware_INTEGRATEDCIRCUITS Gate driver Electronic engineering business Gate equivalent Hardware_LOGICDESIGN Voltage |
| Zdroj: | Analog Integrated Circuits and Signal Processing. 24:175-185 |
| ISSN: | 0925-1030 |
| DOI: | 10.1023/a:1008375423418 |
| Popis: | This paper discusses the design and implementation of a monolithic gate driver for an Insulated Gate Bipolar Transistor (IGBT). The objective is to implement a high voltage (25 V) monolithic gate driver with a novel protection circuit in a conventional low-voltage (5 V) high-density (0.8 μm) BiCMOS process. Extended drain MOS-FETs are used to implement the high-voltage capability in this design. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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