Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer
| Autor: | Jiaqi Wei, Hu Yanpeng, Weisheng Zhao, Kaihua Cao, Lezhi Wang, Wenlong Cai, Qifeng Jiang, Huisong Li, Chao Zhao, Hushan Cui |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Magnetoresistance Condensed matter physics Demagnetizing field Spin-transfer torque Conductance 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials 0103 physical sciences Perpendicular Electrical and Electronic Engineering Antiparallel (electronics) Quantum tunnelling |
| Zdroj: | IEEE Transactions on Magnetics. 55:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| Popis: | The temperature dependence of magnetoresistance and switching characterization based on spin transfer torque (STT) effect of perpendicular magnetic tunnel junctions (p-MTJs) with MgO/CoFeB/W/CoFeB/MgO double-interface free layer was studied. The tunneling magnetoresistance (TMR) ratio increases from 95% to 176% for both 84 and 64 nm-diameter p-MTJs, upon decreasing the temperature from 400 to 20 K. This change of TMR is dominated by a steady increase in the resistance of antiparallel state while the parallel state conductance remains almost constant. Switching behavior at various temperatures is investigated for pulse voltage-dependent STT measurements; resistance versus voltage loops for both the switching directions become more symmetric with decreasing temperature. Furthermore, low-temperature measurements of magnetic properties suggest that the effect of stray field for STT becomes weaker as the temperature decreases, which suggests the p-MTJs design for cryogenic memories. |
| Databáze: | OpenAIRE |
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