Single-pulse RF damage of GaAs FET amplifiers
| Autor: | R.V. Garver, J.H. McAdoo, W.M. Bollen |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Amplifier Microwave power Electrical engineering Astrophysics::Cosmology and Extragalactic Astrophysics Integrated circuit law.invention Gallium arsenide Computer Science::Hardware Architecture chemistry.chemical_compound Computer Science::Emerging Technologies chemistry law Optoelectronics Field-effect transistor Radio frequency business Monolithic microwave integrated circuit Microwave |
| Zdroj: | 1988., IEEE MTT-S International Microwave Symposium Digest. |
| DOI: | 10.1109/mwsym.1988.22033 |
| Popis: | Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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