Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

Autor:	Emmanuel Chereau, Vladimir G. Dubrovskii, Gabin Grégoire, Geoffrey Avit, Philipp Staudinger, Heinz Schmid, Catherine Bougerol, Pierre-Marie Coulon, Philip A. Shields, Agnès Trassoudaine, Evelyne Gil, Ray R. LaPierre, Yamina André
Rok vydání:	2023
Předmět:	General Materials Science General Chemistry Condensed Matter Physics
Zdroj:	Crystal Growth & Design.
ISSN:	1528-7505 1528-7483
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43f1bd238b4623abeda4624b749d34c1 https://doi.org/10.1021/acs.cgd.3c00172 Zobrazit plný text záznamu