Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress

Autor:	Yuan-Lan Zhang, Jie Zhang, Hong-Ping Ma, Yan-Qing Chi, Hao-Ran Tian, Jian-Hua Liu, Qi-Bin Liu, Zhong-Guo Chen, Qingchun Jon Zhang
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronics Reliability. 136:114630
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2022.114630
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43ec4767452519ae2c63384da54655c3 https://doi.org/10.1016/j.microrel.2022.114630 Zobrazit plný text záznamu Full Text from ScienceDirect