Superlattice Photocathode with High Brightness and Long NEA-Surface Lifetime
| Autor: | Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro, Donald G. Crabb, Yelena Prok, Matt Poelker, Simonetta Liuti, Donal B. Day, Xiaochao Zheng |
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| Rok vydání: | 2009 |
| Předmět: |
Brightness
Photomultiplier Condensed Matter::Other Physics::Instrumentation and Detectors business.industry Chemistry Superlattice Photoelectric effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Photocathode Condensed Matter::Materials Science Semiconductor Electron affinity Optoelectronics Quantum efficiency Atomic physics business |
| Zdroj: | AIP Conference Proceedings. |
| DOI: | 10.1063/1.3215590 |
| Popis: | We have suggested that a small momentum spread of photoelectrons and high quantum efficiency can be obtained concurrently by a photocathode using a semiconductor with a superlattice instead of a bulk. We have begun to search for the suitable semiconductor material of a superlattice photocathode for maintaining the surface with a negative electron affinity state for a long time. We measured quantum efficiency degradation of photocathodes using GaAs and AlGaAs semiconductors with various electron affinities. The AlGaAs semiconductor had a quantum efficiency lifetime of 10 times long compared with the GaAs semiconductor. We found that the AlGaAs semiconductor was the suitable material for the superlattice photocathode with the surface maintaining a negative electron affinity state for a long time. |
| Databáze: | OpenAIRE |
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