Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater
| Autor: | Ulrich Böttger, Karsten Fleck, Rainer Waser, Carsten Funck, M. von Witzleben, E. Wichmann, Thomas Breuer, Stephan Menzel |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science business.industry Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Temperature measurement Resistive random-access memory 0103 physical sciences Thermal Electrode Optoelectronics Current (fluid) 0210 nano-technology business Joule heating Voltage |
| Zdroj: | NVMTS |
| DOI: | 10.1109/nvmts.2017.8171313 |
| Popis: | The physical principle of redox based resistive switching memory cells is based on ionic and electronic transport propertips. Both normally reveal a strong temperature dependence. A novel heating setup enables to study the influence of high temperatures on the switching mechanism of these memories. It consists of a 100 nm-wide Pt heating line and includes a Pt/Ta 2 O 5 /Ta-based ReRAM cell. It is heated up by inducing a current through the Pt line and employing the Joule heating effect. From this setup unique features are obtained by I-V measurements of the ReRAM cell. For instance, a negative differential resistance during the SET process is observed, which results from the circuitry of the heating structure. In case of the high resistive state, an increase in the current is observed at higher temperatures. In contrast, the current in the low resistive state is temperature independent. The increasing temperatures also lead to a reduction of the switching voltages of the SET and RESET events. |
| Databáze: | OpenAIRE |
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