N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
| Autor: | J. O. Chu, K.K. Chan, Juan Cai, Diane C. Boyd, Y.Y. Yang, Kern Rim, Jean Jordan-Sweet, Patricia M. Mooney, Silke Christiansen, H. Chen |
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| Rok vydání: | 2005 |
| Předmět: |
Alternative methods
Electron mobility Materials science Silicon Annealing (metallurgy) business.industry Electrical engineering chemistry.chemical_element Condensed Matter Physics Gate voltage Buffer (optical fiber) Electronic Optical and Magnetic Materials chemistry MOSFET Materials Chemistry N channel Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 49:1669-1673 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2005.07.024 |
| Popis: | He-implantation and annealing is an alternative method of fabricating strain-relaxed SiGe buffer layers for applications such as strained Si MOSFETs. Here we report the characteristics of He-implanted and annealed SiGe buffer layers and the properties of n-channel MOSFETs fabricated with them. We find that the electron mobility is comparable to the value obtained from devices fabricated with graded SiGe buffer layers. The drive current is 1.8 times larger than that in bulk Si control devices and short channel MOSFETs have a low current at negative gate voltage. |
| Databáze: | OpenAIRE |
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