Packaged 2×2 array of InGaAs/InP multiple quantum well modulators grown by double-sided epitaxy

Autor:	M.A.Z. Rejman-Greene, E.G. Scott
Rok vydání:	1990
Předmět:	Materials science business.industry Quantum-confined Stark effect Electronic packaging Substrate (electronics) Epitaxy Gallium arsenide chemistry.chemical_compound Planar Optical modulator chemistry Optoelectronics Electrical and Electronic Engineering business Quantum well
Zdroj:	Electronics Letters. 26:946
ISSN:	0013-5194
DOI:	10.1049/el:19900617
Popis:	Epitaxial growth of InGaAs/InP MQW structures on both sides of an InP substrate is used to enhance the performance of planar optical modulators to 3.8 dB for −10 V change in bias. 2×2 arrays of such devices, operating at 1.51 μm, are realised by means of a novel packaging scheme.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43d4d65e8027541497c2c87185a57891 https://doi.org/10.1049/el:19900617 Zobrazit plný text záznamu