Near-Carrier Phase Noise Suppression at Turnover Temperature in a Thin-Film Piezoelectric-on-Silicon Oscillator
| Autor: | Heather Hofstee, Reza Abdolvand, Yasaman Majd, Hossein Miri Lavasani, Sarah Shahraini, Garett Goodale |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Noise suppression
Materials science Silicon Carrier phase Mechanical Engineering chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Piezoelectricity Temperature measurement 0104 chemical sciences Resonator chemistry Phase noise Electrical and Electronic Engineering Thin film Atomic physics 0210 nano-technology |
| Zdroj: | Journal of Microelectromechanical Systems. 29:804-810 |
| ISSN: | 1941-0158 1057-7157 |
| Popis: | In this paper, the near-carrier enhancement of phase-noise (PN) at turnover temperature ( ${T} _{to}$ ) in a quasi-thickness-Lame (QTL) mode thin-film piezoelectric-on-silicon (TPoS) oscillator is reported for the first time. QTL-TPoS resonators fabricated on degenerately-doped n-type silicon offer a ${T} _{to}$ greater than 80°C and are suitable for implementation of highly-stable ovenized oscillators. In this work, a ~123MHz QTL-TPoS resonator is heated up to ${T} _{to}$ (~90°C) by injecting current through the silicon body of the resonator. It is experimentally observed that at turnover temperature, the phase-noise slope close to the carrier frequency ( $\Delta $ f 100Hz ) decreases substantially in contrast to the expected trends. A ~10dB improvement in phase noise at 10Hz offset and a ~25dB improvement at 1Hz offset is recorded when the oscillator is operating at ${T} _{to}$ compared to room temperature. [2020-0206] |
| Databáze: | OpenAIRE |
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