Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design
| Autor: | Byung-Gook Park, Tackhwi Lee, Jong-Ho Bae, Dong Hwan Lee, Ho-Jung Kang, Nagyong Choi, Jong-Ho Lee, S.-C. Chung |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Very-large-scale integration Materials science Nand flash memory business.industry 020208 electrical & electronic engineering chemistry.chemical_element 02 engineering and technology Nitride 01 natural sciences Erbium chemistry Aerospace electronics Logic gate 0103 physical sciences Lateral diffusion 0202 electrical engineering electronic engineering information engineering Space program Optoelectronics business |
| Zdroj: | 2018 IEEE Symposium on VLSI Technology. |
| DOI: | 10.1109/vlsit.2018.8510660 |
| Popis: | A new space program (PGM) scheme is proposed to achieve reliable triple-level-cell (TLC) 3-D NAND flash memory. Considering the lateral diffusion issue of stored electrons in the nitride storage layer, the proposed scheme stores electrons in the nitride layer of the space region between adjacent cells to suppress the lateral movement of trapped electrons in the programmed target cells. The effect of the space PGM can be sustained until 104 s at 90 °C and up to 1k read cycles at 25 °C. The programmed space region of the nitride layer improves the retention characteristics of the cells in the PGM state by 40% and remarkably reduces the V th redistribution. |
| Databáze: | OpenAIRE |
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