Effects of dopants on electronic surface states in InAs
| Autor: | Jonny Dadras, Ji Hyun Park, Christian Ratsch |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Dopant Band gap Ab initio chemistry.chemical_element 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology 01 natural sciences chemistry Chemical physics 0103 physical sciences Density functional theory Beryllium 010306 general physics 0210 nano-technology Surface reconstruction Surface states |
| Zdroj: | Physical Review B. 99 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.99.245406 |
| Popis: | The effects of several adatom dopants (H, Be, C, N, Si, and Zn) on the electronic structure of low-energy surface reconstructions of InAs---(001, 110, 111, and 112) low-index planes---were investigated using ab initio density functional theory calculations. It was observed that the local electronic structure can be controlled in such materials, either reducing or enhancing surface states depending on the dopant and the unique surface reconstruction. The local bonding environment, in particular whether the bonding has an aromatic character, was found to influence both surface reconstruction and a dopant's affinity for a surface. Beryllium and Zinc were often found to reduce the surface states around the band gap, which could improve the charge-carrier mobility in various electronic components. However, these dopants can also cause further surface reconstruction/reconfiguration inducing different surface states. |
| Databáze: | OpenAIRE |
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