Plasma doping: production worthy solution for 65nm and beyond technology nodes

Autor:	Ziwei Fang, Harold M. Persing, Vikram Singh, Timothy J. Miller, Edwin A. Arevalo, Edmund J. Winder
Rok vydání:	2005
Předmět:	Materials science business.industry Doping Transistor Nanotechnology Space charge law.invention PMOS logic law MOSFET Figure of merit Optoelectronics business Throughput (business) Dram
Zdroj:	Extended Abstracts of the Fifth International Workshop on Junction Technology.
DOI:	10.1109/iwjt.2005.203885
Popis:	65nm and beyond advanced logic and DRAM devices will require decreasing junction depths and poly thickness at increasing doses. Present beam-line technology will suffer decreasing throughput during this transition as a result of space charge effects. Plasma doping is a well characterized alternative to beam-line technology that meets the doping requirements for
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43c3b29089e20d1f43d7ea304f685ffc https://doi.org/10.1109/iwjt.2005.203885 Zobrazit plný text záznamu