Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection

Autor:	Kevin P. Musselman, Alagesan Subramanian, Wei Lei, Nasrud Din, Ghulam Abbas, Ahmed Shuja, Qasim Khan, Sajid Hussain, Jing Chen
Rok vydání:	2020
Předmět:	Materials science business.industry Near-infrared spectroscopy Transistor Photodetector Charge (physics) Photodetection Electronic Optical and Magnetic Materials Photodiode law.invention law Materials Chemistry Electrochemistry Optoelectronics business Current density Voltage
Zdroj:	ACS Applied Electronic Materials. 2:3871-3879
ISSN:	2637-6113
DOI:	10.1021/acsaelm.0c00707
Popis:	The vertical field-effect phototransistor (VFEPT) has received great attention because of its large current density and the low operation voltage required to achieve the desirable photodetector per...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43bfbe38cba22c2842c4f243f0033e34 https://doi.org/10.1021/acsaelm.0c00707 Zobrazit plný text záznamu