Radiation recombination in InAsSb/InAsSbP double heterostructures
| Autor: | O. B. Gusev, M. Aydaraliev, S.A. Karandashov, B. A. Matveev, G. N. Talalakin, N V Zotova, M. N. Stus, M. S. Bresler |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Photoluminescence
Chemistry business.industry Physics::Optics Heterojunction Radiation Electroluminescence Condensed Matter Physics Laser Cladding (fiber optics) Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law Materials Chemistry Optoelectronics Spontaneous emission Electrical and Electronic Engineering Electronic band structure business |
| Zdroj: | Semiconductor Science and Technology. 10:151-156 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Using photoluminescence (PL) and electroluminescence (EL) measurements and calculated energy band diagrams, we have studied the mechanisms of radiation recombination in InAsSb/InAsSbP double heterostructures forming the basis of lasers emitting at 3.6 mu m. Up to four PL lines are observed, which can be attributed to band-to-acceptor transitions in the active region, cladding layer and substrate and band-to band transitions in the substrate. In EL experiments emission from the active region and the InAs/InAsSbP interface was detected. The possibility of creating a tunable radiation source emitting at two wavelengths is demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|