A monolithic GaAs 1 - 13-GHz traveling-wave amplifier
| Autor: | J.L. Vorhaus, R. Mozzi, R.A. Pucel, L.D. Reynolds, Y. Ayasli |
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| Rok vydání: | 1982 |
| Předmět: |
Power gain
Frequency response Engineering business.industry Transconductance Flatness (systems theory) Amplifier Electrical engineering Integrated circuit Noise (electronics) Microstrip Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 29:1072-1077 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/t-ed.1982.20836 |
| Popis: | This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and ± 1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Ω input and output lines. In this approach, GaAs FET's periodically load input and output microstrip lines and provide the coupling between them with proper phase through their transconductance. Experimental results and the circuit details of such a structure are discussed. Initial results of a noise analysis and predictions on the noise performance are also given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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