Resist charging effect in photomask: Its impact on pattern placement error and critical dimension

Autor:	Byung-Gook Kim, Jin Choi, Dong Seok Nam, Sang-Gyun Woo, Han-Ku Cho
Rok vydání:	2008
Předmět:	Correction method Materials science business.industry Condensed Matter Physics Optics Resist Position (vector) Multiple patterning Position error Wafer Electrical and Electronic Engineering Photomask business Critical dimension
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2345-2350
ISSN:	1520-8567 1071-1023
Popis:	By the development of the double exposure technique or the double patterning technique, the pattern placement error of a photomask is interesting because of its impact on the size and position of wafer pattern. Among various sources to induce the pattern placement error, we have focused on the charging effect of the FEP-171 resist and have shown that the resist charging effect generates the pattern position error of a clear pattern and the critical dimension variation of a dark pattern. Based on experiment and simulation, we present quantitatively the dependence of position error on pattern density, pattern shape, and writing order. Furthermore, we have discussed the model to describe the charging effect and its agreement with experiment and the correction method to remove the resist charging effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43a7612108bc02350dac1bc7e15c27c3 https://doi.org/10.1116/1.2978406 Zobrazit plný text záznamu