Trends in dislocation-structure formation along slip lines

Autor: V. I. Veselov, G. I. Nichugovskii, A. A. Predvoditelev
Rok vydání: 1983
Předmět:
Zdroj: Soviet Physics Journal. 26:65-68
ISSN: 1573-9228
0038-5697
Popis: Simulation has given statistical relationships for the early stage of slip-band development. Dislocation multiplication is considered within the framework of a double transverse slip model. There is a relationship between the number of loops at the surface and that within the crystal. A method is given for determining the times for source formation and loop generation, and numerical estimates are made from the published experimental data.
Databáze: OpenAIRE