A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTs
| Autor: | David T. Zweidinger, John D. Cressler, Jonggook Kim, Keith Green, Brian R. Wier |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic circuit simulation Electronic Optical and Magnetic Materials Silicon-germanium Stress (mechanics) chemistry.chemical_compound Current mirror chemistry 0103 physical sciences Electronic engineering Electrical and Electronic Engineering 0210 nano-technology Cadence Degradation (telecommunications) |
| Zdroj: | IEEE Transactions on Electron Devices. 63:2987-2993 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | A physics-based silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) aging model for mixed-mode stress based on the lucky-electron model and reaction-diffusion theory is developed for integration with compact models. An effective aging parameter extraction method is described, and the aging model parameters are fit for a modern SiGe HBT platform. The aging model is implemented as a wrapper in the Cadence Spectre circuit simulator. Device-level aging simulations are shown to be well-matched to measured degradation data. The aging model is further used to explore the effects of aging on a simple current mirror circuit, showing a decrease in mirror ratio with degradation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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