Broad-band SiGe MMICs for phased-array radar applications

Autor:	M. Hauhe, G.M. Sakamoto, R. Alidio, Yoosin Kang, R. Tayrani, Q. Chaudhry, M.A. Teshiba, I.S. Ahmad, T.C. Cisco
Rok vydání:	2003
Předmět:	Attenuator (electronics) Materials science business.industry Phased array Heterojunction bipolar transistor Amplifier Electrical engineering Integrated circuit Transfer switch law.invention law Electrical and Electronic Engineering business Phase shift module Monolithic microwave integrated circuit
Zdroj:	IEEE Journal of Solid-State Circuits. 38:1462-1470
ISSN:	0018-9200
DOI:	10.1109/jssc.2003.815933
Popis:	This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe p-i-n diode offered by the IBM 5HP SiGe foundry process. Utilizing this diode, several control circuitries including a broad-band (1-20-GHz) monolithic single-pole double-throw switch, a five-port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz, are designed. Also, the design and performance of an SiGe heterojunction bipolar transistor variable-gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::439b4a84106bd57d44762e303fe992b4 https://doi.org/10.1109/jssc.2003.815933 Zobrazit plný text záznamu