Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
| Autor: | Seung Ryong Lee, Se-Aug Jang, Ja-Chun Ku, Hong-Seon Yang, Min Gyu Sung, Heung-Jae Cho, Kwan-Yong Lim, Tae-Yoon Kim, Yong Soo Kim, Jinwoong Kim |
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| Rok vydání: | 2007 |
| Předmět: |
Dynamic random-access memory
Materials science Physics and Astronomy (miscellaneous) Diffusion barrier business.industry Gate dielectric Contact resistance General Engineering General Physics and Astronomy chemistry.chemical_element Time-dependent gate oxide breakdown Tungsten equipment and supplies law.invention chemistry law Gate oxide Optoelectronics business Metal gate |
| Zdroj: | Japanese Journal of Applied Physics. 46:7256-7262 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.46.7256 |
| Popis: | Gate oxide reliability characteristics using different diffusion barrier metals for a tungsten polycrystalline silicon (poly-Si) gate stack were investigated in detail. The insertion of a thin WSix layer in a tungsten poly gate stack could effectively relieve the mechanical stress of a gate hardmask nitride film during a post thermal process, which contributes to better gate oxide reliability and the stress-immunity of the transistor. This insertion could also prevent the formation of a Si–N inter-dielectric layer, which could lower the contact resistance between poly and tungsten effectively. A W/WN/WSix/poly gate stack could be a promising candidate for a future W poly gate that shows reliable high-speed characteristics in dynamic random access memory applications. |
| Databáze: | OpenAIRE |
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