Application of HSQ (hydrogen silsesquioxane) based SOG to pre-metal dielectric planarization in STC (stacked capacitor) DRAM

Autor:	J.S. Goo, Hansin Lee, K. Fujihara, U-In Chung, Sung-Yung Lee, Jeong-Dong Choi, Byungjoon Hwang, Miji Lee, Keunwoo Kim
Rok vydání:	2002
Předmět:	Materials science Hydrogen business.industry chemistry.chemical_element Dielectric Planarity testing law.invention Capacitor chemistry.chemical_compound chemistry law Chemical-mechanical planarization Electronic engineering Optoelectronics Degradation (geology) business Hydrogen silsesquioxane Dram
Zdroj:	1996 Symposium on VLSI Technology. Digest of Technical Papers.
DOI:	10.1109/vlsit.1996.507813
Popis:	We investigated a new planarization process by employing a flowable HSQ (hydrogen silsesquioxane) based inorganic SOG (spin-on-glass) for pre-metal dielectric material, in order to develop a simple planarization process with low thermal budget and good planarity in STC (stacked capacitor) DRAM devices. We implemented this process in 256 Mb DRAM devices, and achieved lower TaO leakage current and better Al-reflow characteristics as well as better planarization performance than those of conventional BPSG process. Degradation of device characteristics such as Vth change or hot-carrier hardness were not observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::437f76e4f22a2e30a3ef3da1628ace80 https://doi.org/10.1109/vlsit.1996.507813 Zobrazit plný text záznamu