High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application

Autor:	Nobuyoshi Saito, Tsutomu Tezuka, Keiji Ikeda, Junji Kataoka, Tomoaki Sawabe, Tomomasa Ueda
Rok vydání:	2019
Předmět:	Materials science CMOS business.industry Schottky barrier Parasitic element Optoelectronics Field-effect transistor Equivalent oxide thickness Insulator (electricity) business AND gate Band offset
Zdroj:	2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Popis:	We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm2/Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::437ab248c9270e380ee7e7a3a70d0432 https://doi.org/10.23919/am-fpd.2019.8830602 Zobrazit plný text záznamu