Nitrogen-incorporated nanodiamond vacuum field emission transistor with vertically configured self-aligning gate
| Autor: | W.P. Kang, Anurat Wisitsoraat, S. H. Hsu, J.L. Davidson |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Transistor Hardware_PERFORMANCEANDRELIABILITY General Chemistry Chemical vapor deposition Integrated circuit Electronic Optical and Magnetic Materials law.invention Field electron emission law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Microelectronics Electrical and Electronic Engineering business Saturation (magnetic) Static induction transistor Voltage |
| Zdroj: | Diamond and Related Materials. 22:142-146 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2011.12.020 |
| Popis: | A vacuum field emission (VFE) transistor in vertical configuration with nitrogen-incorporated nanocrystalline-diamond emitters is presented. A novel self-aligned gate partition technique was utilized to construct the VFE device. The gate-controlled modulation of the emission current was demonstrated. A high emission current of 160 μA and a low gate turn-on voltage of 25 V were achieved. The device displayed high DC voltage gain of 1000 and negligible gate intercepted current, which are crucial features for microelectronic applications. Basic transistor characteristics with distinct cutoff, linear, and saturation regions were observed, revealing the practical application of the device for vacuum microelectronics and integrated circuits. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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