Analytical Compact Model for Transcapacitances of Junctionless Nanowire Transistors

Autor:	Fernando Avila-Herrera, Marcelo Antonio Pavanello, Antonio Cerdeira, Thales Augusto Ribeiro
Rok vydání:	2021
Předmět:	Physics Computer simulation business.industry Logic gate Optoelectronics Numerical models Solid modeling Nanowire transistors Triple gate business
Zdroj:	2021 IEEE Latin America Electron Devices Conference (LAEDC).
DOI:	10.1109/laedc51812.2021.9437910
Popis:	This paper presents the proposal of a compact analytical model for the transcapacitances of long-channel triple gate junctionless nanowire transistors. The model is validated using comparisons against 3D TCAD simulations showing very good agreement, with continuous transitions between all regions of operation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::437215a172f288d5aef72d676dc0982c https://doi.org/10.1109/laedc51812.2021.9437910 Zobrazit plný text záznamu