Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs
| Autor: | M. Y. Vyrostkov, K. B. Bu-Khasan, A. Privat, T. A. Maksimenko, A. E. Koziukov, A. A. Kalashnikova, Kenneth F. Galloway, Hugh J. Barnaby, K. Muthuseenu |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry High voltage Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials Power (physics) Planar Hardware_GENERAL Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Power semiconductor device Field-effect transistor Electrical and Electronic Engineering Power MOSFET business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 68:4004-4009 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | This article presents design for a 650-V super-junction (SJ) power metal–oxide–semiconductor field effect transistor (MOSFET) which improves tolerance to both single-event burnout (SEB) and single-event gate rupture (SEGR). Experimental measurements of SEGR in a generic commercial planar gate SJ device are used to validate the accuracy of the design. In an SJ device with a planar gate, reducing the neck width improves the tolerance to gate rupture but significantly changes the electrical device characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. The proposed trench gate structure improves the SEGR survivability by a factor of 10. |
| Databáze: | OpenAIRE |
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