Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers
| Autor: | Pedro M. Tome, Telmo R. Cunha, Filipe M. Barradas, Joao L. Gomes, Jose C. Pedro, Luis C. Nunes |
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| Rok vydání: | 2021 |
| Předmět: |
Physics
Radiation Amplifier Transistor 020206 networking & telecommunications Biasing Gallium nitride 02 engineering and technology High-electron-mobility transistor Condensed Matter Physics law.invention chemistry.chemical_compound chemistry law 0202 electrical engineering electronic engineering information engineering Electronic engineering Radio frequency Transient (oscillation) Electrical and Electronic Engineering Electronic circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 69:529-540 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2020.3006290 |
| Popis: | Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slow dynamic residual nonlinearity in communications applications. For this reason, and based on recent developments in the characterization and modeling of charge-trapping phenomena, in this article we demonstrate how the dynamic self-biasing behavior of GaN HEMT-based PAs can be characterized, modeled, and compensated. First, we describe a method for the accurate characterization of the capture and emission dynamics of charge-trapping phenomena using transient two-tone large-signal RF measurements. Then, we demonstrate that the accurate modeling of these phenomena is contingent on the capture process being described by a state-variable time constant, rather than a fixed near-instantaneous time constant as is typically assumed. Finally, we propose a fully analog electronic circuit that implements an approximation of the Shockley–Read–Hall (SRH) statistics-based physical model of charge trapping to compensate the dynamic self-biasing behavior of a 15 W GaN HEMT-based PA. |
| Databáze: | OpenAIRE |
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