Admittance of a-Si:H/c-Si Schottky Diodes

Autor:	M. Kolter, D. Bräunig, S. Gall, R. Hirschauer
Rok vydání:	1996
Předmět:	Admittance Materials science Electrical resistivity and conductivity business.industry Schottky diode Optoelectronics Conductance Equivalent circuit Heterojunction Electric potential business Capacitance
Zdroj:	MRS Proceedings. 420
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-420-245
Popis:	We have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between λ=500nm and λ=1200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-Si:H/c-Si interface). We have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behaviour of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. We have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behaviour.
Databáze:	OpenAIRE
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