Doping-spike PtSi Schottky infrared detectors with extended cutoff wavelengths
| Autor: | E. W. Jones, True-Lon Lin, Jin S. Park, Sarath D. Gunapala, H. M. Del Castillo |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Infrared Schottky barrier Schottky effect Doping Schottky diode Cutoff frequency Electronic Optical and Magnetic Materials Semiconductor detector Condensed Matter::Materials Science chemistry.chemical_compound Optics chemistry Condensed Matter::Superconductivity Silicide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 42:1216-1220 |
| ISSN: | 0018-9383 |
| Popis: | A technique incorporating a p/sup +/ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike ( > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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