High density epitaxial unwanted growth and its effect on planarization in FINFET process
| Autor: | Shashidhar Shintri, Ludmila Popova, M. Hariharaputhiran, Venkat Kolagunta, Jagadeesh Yarramsetty, Brad Chen, Chia Hao Tsao, Pit Fee Jao |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Silicon business.industry chemistry.chemical_element Epitaxy 01 natural sciences PMOS logic Metrology Silicon-germanium chemistry.chemical_compound chemistry Chemical-mechanical planarization Logic gate 0103 physical sciences Optoelectronics business |
| Zdroj: | 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). |
| DOI: | 10.1109/asmc.2018.8373183 |
| Popis: | While epitaxial growth enhances carrier mobility of PMOS devices, it introduces an unwanted growth (UG) defect which is an artifact of Silicon Germanium (SiGe) component that becomes a yield detractor in high volume manufacturing. This paper describes the effect of high density UG defect on downstream CMP processes, detection methods using both defect scan and in-situ metrology. Use of high resolution defect scans and high throughput inline metrology was the key to detection of non-conforming material. |
| Databáze: | OpenAIRE |
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