Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects
| Autor: | Oana Malis, Paul Harrison, Dragan Indjin, Andrew Grier, Anton Valavanis, J. Shao, Geoff Gardner, M. J. Mantra, Zoran Ikonic, C. Edmunds, J. D. Cooper |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Interface (computing) Wide-bandgap semiconductor 02 engineering and technology Surface finish 021001 nanoscience & nanotechnology 01 natural sciences Quality (physics) Material quality 0103 physical sciences Optoelectronics Opto electronic 0210 nano-technology business Quantum tunnelling Diode |
| Zdroj: | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). |
| Popis: | We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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