Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes

Autor:	G. Moutchnik, Jürgen Christen, Klaus Thonke, M. Schirra, Peter Brückner, M. Beer, Ferdinand Scholz, Barbara Neubert, Josef Zweck, T. Riemann, Frank Habel, Michael Jetter, Martin Feneberg
Rok vydání:	2006
Předmět:	Wavelength Materials science Dopant business.industry Optoelectronics Metalorganic vapour phase epitaxy Facet Condensed Matter Physics business Luminescence Epitaxy Piezoelectricity Quantum well
Zdroj:	physica status solidi c. 3:1587-1590
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200565185
Popis:	Multiple GaInN quantum wells (QWs) were grown on side facets with reduced piezoelectric fields (PFs) of selectively grown GaN stripes oriented along the 〈100〉 and 〈110〉 directions by metalorganic vapor phase epitaxy (MOVPE). The different luminescence wavelengths observed for the QWs on these facets can be explained by the reduced PFs, additionally the QW thickness depends on the facet type. Although stripes running along 〈100〉 and 〈110〉 develop similar triangular or trapezoidal shape, their detailed growth behaviour, electrical and luminescence properties differ significantly pointing to different adsorption/desorption and inter-facet migration processes of In, Ga and the p-type dopant Mg. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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