Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors
| Autor: | Chang Lin Wu, Chia Hung Chiang, Po Chih Kuo, Yow-Jon Lin |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Displacement current business.industry General Physics and Astronomy Schottky diode Biasing Thermal conduction 01 natural sciences Organic semiconductor Pentacene chemistry.chemical_compound chemistry Thin-film transistor 0103 physical sciences Optoelectronics business Leakage (electronics) |
| Zdroj: | Indian Journal of Physics. 94:797-800 |
| ISSN: | 0974-9845 0973-1458 |
| DOI: | 10.1007/s12648-019-01526-3 |
| Popis: | The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. |
| Databáze: | OpenAIRE |
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