Effects of annealing temperature on characteristics of amorphous nickel carbon thin film alloys deposited on n-type silicon substrates by reactive sputtering
| Autor: | Sham-Tsong Shiue, Zih-Chen Hong |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Metallurgy Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Nickel chemistry Amorphous carbon Sputtering 0103 physical sciences Materials Chemistry Thin film 0210 nano-technology |
| Zdroj: | Thin Solid Films. 618:21-27 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2016.04.032 |
| Popis: | The amorphous nickel carbon ( a -NiC) thin film alloys were prepared on n -type silicon ( n- Si) wafers by reactive sputtering system, which was modified from the radio frequency-plasma enhanced chemical vapor deposition (rf-PECVD) by adding a sputtering target on the top electrode. Pure methane was used as the precursor gas to form the amorphous carbon ( a -C) film by rf-PECVD, and argon was used as the sputtering gas to bombard the nickel target surface to dope nickel in a -C film by sputtering. These a -NiC thin film alloys were annealed at the temperatures of 373, 473, 573, 623, 673, and 773 K, and the effects of annealing temperature on the characteristics of a -NiC thin film alloys are investigated. The measured results indicate that the carbon-hydrogen bonds in a -NiC thin film alloys decrease with increasing the annealing temperature from as-deposited to 773 K, but the sp 2 /(sp 2 + sp 3 ) carbon ratio of a -NiC thin film alloys increases from 52 to 82% and the Ni/C ratio of a -NiC thin film alloys also increases from 1.4 to 25.6%. As a result, as the annealing temperature increases from as-deposited to 773 K, the optical band gap of a -NiC thin film alloys decreases from 2 to 0.1 eV and the electrical resistivity of a -NiC thin film alloys decreases from 275 to 3.3 × 10 − 3 Ω m. The current density-voltage results show that the a -NiC/ n -Si diode exhibits the rectifying behavior, so all the a -NiC thin film alloys annealed at various temperatures are p -type. The a -NiC/n-Si diode has the lowest series resistance of 14.5 Ω and the best ideality factor of 1.4 at the annealing temperature of 673 K. |
| Databáze: | OpenAIRE |
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