Physical modelling for uniformity control of rapid thermal processes

Autor:	J.-M. Dilhac, Christian Ganibal, N. Nolhier
Rok vydání:	2002
Předmět:	Temperature control Materials science Rapid thermal processing Thermal Semiconductor device modeling Process control Wafer Heat equation Mechanics Solid modeling
Zdroj:	Proceedings of IEEE Systems Man and Cybernetics Conference - SMC.
DOI:	10.1109/icsmc.1993.384842
Popis:	In this paper, we first present a simulation tool to calculate, in two dimensions, a 4" Si wafer irradiation distribution. Then, the heat diffusion equation is numerically solved in two dimensions, and thermal maps of the wafer are given vs. various hardware arrangements. Finally, the incorporation of thermal modeling into a control procedure is presented and discussed. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::43436cb9ca952db09b86ceee2e77e59e https://doi.org/10.1109/icsmc.1993.384842 Zobrazit plný text záznamu