Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation
| Autor: | Masanori Nagahashi, Hideaki Araki, Win Shwe Maw, Makoto Yamazaki, Koichiro Oishi, Genki Saito, Kazuo Jimbo, Kiyoshi Ebina, Hironori Katagiri, Akiko Takeuchi |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Metals and Alloys Surfaces and Interfaces Epitaxy Evaporation (deposition) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Vacuum evaporation Tetragonal crystal system Crystallography Electron diffraction Materials Chemistry Crystallite Thin film |
| Zdroj: | Thin Solid Films. 517:1449-1452 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2008.09.056 |
| Popis: | Cu 2 ZnSnS 4 films were grown on Si (100) by vacuum evaporation using elemental Cu, Sn, S and binary ZnS as sources. X-ray diffraction patterns of films grown at different substrate temperatures indicated that polycrystalline growth was suppressed and the orientational growths were relatively induced in a film grown at higher temperatures. Tetragonal structure of Cu 2 ZnSnS 4 films was confirmed by studying RHEED patterns. The existence of c -axis ([001] direction) growth, two kinds of a -axis (〈100〉 direction) growth and four kinds of {112} twins which can be classified as two symmetrical pairs is proposed. Broad emissions at around 1.45 eV and 1.31 eV were observed in the photoluminescence spectrum measured at 13 K. |
| Databáze: | OpenAIRE |
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