Improved photoelectrochemical performance of electrodeposited metal-doped BiVO4 on Pt-nanoparticle modified FTO surfaces
| Autor: | Wolfgang Schuhmann, Ramona Gutkowski, Daniel Peeters |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Thin layers Renewable Energy Sustainability and the Environment business.industry Oxygen evolution Nanoparticle Nanotechnology 02 engineering and technology General Chemistry Overpotential 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Electron transport chain 0104 chemical sciences Optoelectronics General Materials Science Charge carrier 0210 nano-technology business Absorption (electromagnetic radiation) Recombination |
| Zdroj: | Journal of Materials Chemistry A. 4:7875-7882 |
| ISSN: | 2050-7496 2050-7488 |
| DOI: | 10.1039/c6ta01340f |
| Popis: | The recombination of photogenerated electron–hole pairs is one of the main limiting factors of photoelectrocatalysts absorbing in the visible part of the solar spectrum. Especially for BiVO4 the slow electron transport to the back contact facilitates charge recombination. Hence, thin layers have to be used to obtain higher photocurrents which are concomitantly only allow low absorption of the incident light. To address this limitation we have modified FTO substrates with Pt-nanoparticles before electrodepositing BiVO4. The Pt-nanoparticles decrease the overpotential for the electrodeposition of BiVO4, but more importantly they provide the basis for decreased charge recombination. Electrodeposited Mo-doped BiVO4 on Pt-nanoparticle modified FTO exhibits a substantially decreased recombination of photogenerated charge carriers during frontside illumination. Simultaneous co-doping of BiVO4 with two different metals leads to a substantial enhancement of the incident-photon-to-current efficiency (IPCE) during light driven oxygen evolution reaction. Highest IPCE (>30% at 1.2 V vs. RHE) values were obtained for Mo/Zn- and Mo/B-doped BiVO4. |
| Databáze: | OpenAIRE |
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