Tungsten voids improvement by optimizing MOCVD-TiN barrier layer plasma treatment at 28 nm technology node
| Autor: | Gang Shi, Haifeng Zhou, Fang Jingxun, Yanyan Zhang, Zhong Bin, Kang Ye, Lin Gao, Liu Yingming, Bao Yu |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Void (astronomy) Materials science business.industry Contact resistance chemistry.chemical_element Nanotechnology Plasma treatment 02 engineering and technology Polymer Tungsten 021001 nanoscience & nanotechnology 01 natural sciences Barrier layer chemistry 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology Tin business |
| Zdroj: | 2017 China Semiconductor Technology International Conference (CSTIC). |
| DOI: | 10.1109/cstic.2017.7919809 |
| Popis: | As the dimensions of middle-of-line (MOL) contacts shrink, the tungsten (W) gap-filling capability becomes more critical to eliminate function failure in SRAM and logic circuit caused by W-voids. The formation of W-voids is generally related to contact profile, barrier (Ti/TiN) property and W-plug deposition method. The barrier layer may be degraded due to out-gassing from polymer residues underneath which prevent robust CVD W fill and leads to W void issue. In this paper, the impact of post-deposition plasma treatment of the underlying MOCVD-TiN barrier on the subsequent W gapfilling behavior and contact resistance was systematically investigated. Results show that the optimized plasma treatment of the barrier layer can reduce out-gassing during the subsequent W deposition, thus achieve better gapfilling capability and minize W-voids. |
| Databáze: | OpenAIRE |
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