Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor–electrolyte interfaces
| Autor: | J. E. Littman, W. P. Zurawsky, H. G. Drickamer |
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| Rok vydání: | 1983 |
| Předmět: |
Materials science
Valence (chemistry) Condensed matter physics Band gap business.industry Inorganic chemistry General Physics and Astronomy Electrolyte Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Thermal conduction Semimetal Condensed Matter::Materials Science Semiconductor Valence band Direct and indirect band gaps business |
| Zdroj: | Journal of Applied Physics. 54:3216-3219 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.332483 |
| Popis: | The effect of pressure on the band gap and flatband potential of n‐ and p‐type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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