| Autor: |
Yoshio Nishi, Peter Lee, Neal Berger, Yuniarto Widjaja, Zvi Or-Bach, Jin-Woo Han, Valentin Abramzon, Benjamin Louie, Winston Lee, Runzi Chang, Stefan K. Lai |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 IEEE International Electron Devices Meeting (IEDM). |
| Popis: |
A 1-transistor SRAM on bulk substrate is presented. The device is fabricated in 28 nm foundry baseline process with an additional buried N-well (BNWL) implant. The unit cell consists of a lateral MOS for memory access operations and intrinsic vertical open-base bipolar structures for self-latch function. The bit cell operation and the disturb immunity are verified at high temperature. Using 28 nm design rules, a unit cell size of 0.025 μm2 is achieved, offering 80% cell size reduction over 6T-SRAM and providing comparable power and performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
