Morphology evolution on diamond surfaces during ion sputtering
Autor: | David P. Adams, Michael J. Vasile, Kim M. Archuleta, Thomas M. Mayer |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1579-1587 |
ISSN: | 1520-8559 0734-2101 |
Popis: | We have conducted an extensive study of the evolution of surface morphology of single crystal diamond surfaces during sputtering by 20keV Ga+ and Ga++H2O. We observe the formation of well-ordered ripples on the surface for angles of incidence between 40 and 70°. We have also measured sputter yields as a function of angle of incidence, and ripple wavelength and amplitude dependence on angle of incidence and ion fluence. Smooth surface morphology is observed for 70°. The formation and evolution of well-ordered surface ripples is well characterized by the model of Bradley and Harper, where sputter-induced roughening is balanced by surface transport smoothing. Smoothing is consistent with an ion-induced viscous relaxation mechanism. Ripple amplitude saturates at high ion fluence, confirming the effect of nonlinear processes. Differences between Ga+ and Ga++H2O in ripple wavelength, amplitude, and time to saturation of amplitude are consis... |
Databáze: | OpenAIRE |
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