SHE-NVFF: Spin Hall Effect-Based Nonvolatile Flip-Flop for Power Gating Architecture
| Autor: | Sang Phill Park, Yusung Kim, Xuanyao Fong, Kon-Woo Kwon, Sri Harsha Choday, Kaushik Roy |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Engineering
Power gating business.industry Electrical engineering Spin-transfer torque Driver circuit Electronic Optical and Magnetic Materials law.invention Tunnel magnetoresistance Backup law Low-power electronics Electronic engineering Spin Hall effect Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business Flip-flop Hardware_LOGICDESIGN |
| Zdroj: | IEEE Electron Device Letters. 35:488-490 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2014.2304683 |
| Popis: | A novel nonvolatile flip-flop (NVFF) using a magnetic tunnel junction (MTJ) is presented for power gating architecture. The proposed NVFF exploits spin Hall effect (SHE) for fast and low-power data backup into MTJs before the power is gated off. Owing to the high spin injection efficiency of SHE, the estimated write current for backup operation is lower than 40 μA. Due to the low write current requirement, we do not introduce a dedicated write driver circuit. Instead, we utilize the cross-coupled inverters in the slave latch to perform the backup operation, resulting in low area overhead. The simulation results show 10× improvement in backup energy when compared with previous works on spin transfer torque-based NVFFs. |
| Databáze: | OpenAIRE |
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