The influence of magnesium on p-type doping and optoelectronic properties of Zn1−xMgxSe-based heterostructures

Autor:	S. A. Telfer, B. Vögele, Christian Morhain, B. C. Cavenett, Bernhard Urbaszek, Kevin Alan Prior
Rok vydání:	1999
Předmět:	Photoluminescence Band gap business.industry Chemistry Magnesium Doping chemistry.chemical_element Heterojunction Condensed Matter Physics Inorganic Chemistry Materials Chemistry Optoelectronics P type doping business Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :950-953
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)01501-2
Popis:	Zn 1− x Mg x Se-based heterostructures were grown by molecular beam epitaxy on (1 0 0) GaAs substrates. In this communication we report on the structural and electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells and on the influence of the magnesium incorporation on the doping behaviour of ZnMgSe : N materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::42df3120f101e6e8bb949f9945c6c8af https://doi.org/10.1016/s0022-0248(98)01501-2 Zobrazit plný text záznamu Full Text from ScienceDirect